ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 1 of 7 5a21n-rev.f001 v dss 60v r ds (on) 12m (typ.) i d 60a description it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on-resis tance with high repetitive avalanche rating. these features combine to make th is design an extremely efficient and reliable devic e for use in power switching application and a wide variety of other a pplications. features and benefits: advanced mosfet process technology special designed for pwm, load switching and general purpose applications ultra low on-resistance with low gate charge fast switching and reverse body recovery 175 operating temperature main product characteristics absolute maximum ratings symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 60 i d @ tc = 100c continuous drain current, v gs @ 10v 42 i dm pulsed drain current 240 a power dissipation 115 w p d @tc = 25c linear derating factor 0.74 w/c v ds drain-source voltage 60 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 235 mj i as avalanche current @ l=0.3mh 39 a t j t stg operating junction and storage temperature range - 55 to + 175 c
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 2 of 7 5a21n-rev.f001 thermal resistance electrical characteristics (t a =25 unless otherwise noted) source-drain ratings and characteristics symbol characteristics typ. max. units r jc junction-to-case 1.31 /w r ja junction-to-ambient 62 /w symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 250 a r ds(on) static drain-to-source on-resistance 12 14 m v gs =10v,i d = 30a 2.0 4.0 v gs(th) gate threshold voltage 2.0 v v ds = v gs , i d =250 a t j = 125c 2 i dss drain-to-source leakage current 10 a v ds = 60v,v gs = 0v t j = 150c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v qg total gate charge 45 qgs gate-to-source charge 4 qgd gate-to-drain("miller") charge 15 nc i d = 30a, v ds =30v, v gs = 10v t d(on) turn-on delay time 14.6 tr rise time 14.2 t d(off) turn-off delay time 40 tf fall time 7.3 ns v gs =10v, v ds =30v, r l =15 , r gen =2.5 ciss input capacitance 1480 coss output capacitance 190 crss reverse transfer capacitance 135 pf v gs = 0v v ds = 25v ? = 1mhz symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 60 a i sm pulsed source current (body diode) 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.3 v i s =30a, v gs =0v trr reverse recovery time 33 ns qrr reverse recovery charge 61 nc t j = 25c, i f =15a, di/dt = 100a/ s
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 3 of 7 5a21n-rev.f001 test circuits and waveforms notes: the maximum current rating is limited by bond-wires . repetitive rating; pulse width limited by max. junc tion temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c these curves are based on the junction-to-case ther mal impedence which is measured with the device mounted to a large heatsink, assuming a maxi mum junction temperature of t j(max) =175c. the maximum current rating is limited by bond-wire s.
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 4 of 7 5a21n-rev.f001 typical electrical and thermal characteristics
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 5 of 7 5a21n-rev.f001
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 6 of 7 5a21n-rev.f001 ordering and marking information ec736014d xx x part number package marking marking information EC736014DA4R to252 to252 a4 r tape & reel
ec 73 6014 d 60 v 6 0 a n - channel e-cmos corp. ( www.ecmos.com.tw ) page 7 of 7 5a21n-rev.f001 package outline dimension
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